ICMTS 2013 - 2013 26Th International Conference On Microelectronic Test Structures
View: 2774
Website www.see.ed.ac.uk/ICMTS |
Edit Freely
Category ICMTS 2013
Deadline: September 21, 2012 | Date: March 25, 2013-March 28, 2013
Venue/Country: Osaka, Japan
Updated: 2012-05-19 23:15:38 (GMT+9)
Call For Papers - CFP
The 26th International Conference on Microelectronic Test Structures will be held at OsakaUniversity Nakanoshima Center, Osaka, Japan, bringing together designers and users of teststructures to discuss recent developments and future directions. The conference will be held onMarch 26-28, 2013, preceded by a one-day Tutorial Short Course on Microelectronic Test Structureson March 25. There will be an equipment exhibition relating to test structure measurements. Originalpapers are solicited presenting new developments in test structures, as well as their implementationand/or application, related to silicon, semiconductors, nanotechnology and MEMS. A Best Paperaward will be presented by the Technical Program Committee. The conference will be held incooperation with the Institute of Electronics, Information and Communication Engineers and, theJapan Society of Applied Physics, and will be sponsored by the IEEE Electron Devices Society, andthe Association for Promotion of Electrical, Electronic and Information Engineering.Suggested topics include (but are not limited to):Material and Process Characterization: Evaluation of wafer start materials (Si, SiGe, strainedsilicon, SOI, III-V, II-VI, etc.), dielectrics (high-k gate, low-k interconnect), homoepitaxial andheteroepitaxial layers. Resistivity, mobility, stress, contact resistance, dielectric, and interconnectmeasurements.Replicated Feature Metrology: Electrical and non-electrical characterization of level-to-levelregistration, feature placement, critical dimension, mask and reticle process control.Manufacturing of Integrated Circuits and MEMS: Evaluation of individual and groups ofintegrated circuits, device and MEMS process steps and elements: transistors, diodes, mechanicalstructures, device isolation, memory cells and interconnect. Assessment of MMICs, RF components,3D integration and multi chip packages.MEMS, NEMS, and Microfluidics: Test structures and methods for evaluating electro-mechanicaldevices, such as actuators, sensors, switches, and microfluidic devices.Large Area Electronics and Emerging Devices: Test structures for evaluating displays, printed /flexible devices, power devices, photovoltaics, as well as emerging devices, such as organic /oxide-based / biomolecular / spintronic devices, ReRAMs, nano-structures, and related materials.Device and Circuit Modeling, Parameter Extraction: Model parameter extraction, RF devicemodeling, de-embedding, pulsed measurements, DC / AC / high frequency measurement techniquesand applications.Reliability Test Structures: Test structures and methods for transistor / thin film / dielectric /interconnect reliability evaluation, quality assurance, thermal monitoring and analysis, acceleratedwafer level tests, wafer level burn-in, and reliability prediction.Matching and Variability Test Structures: Mismatch / variability characterization and modelingof components (transistors, resistors, capacitors, inductors, mechanical components) and circuits.Technology R&D, Integration, and DFM: Test structures for FEOL or BEOL evaluation, designrule determination, process uniformity and worst-case analysis, assessment of integration and newtechnologies. Calibration of DFM models such as lithography, OPC, CMP, or parametric variation.Evaluation and optimization of standard cell macros and other product circuits.Yield Enhancement and Production Process Control: Yield enhancement structures and methods,yield modeling, statistical process control, defect estimation structures and methods, failureidentification and characterization, many-component / matrix test circuitry for technology assessment,evaluation of design-manufacturing interactions (DFY).Test Structure Design Methods: Design flows for automated design, verification strategies, designfor analysis, parameterized design, and related design issues.Test Structure Utilization Strategy: Test equipment, probing and programmable testing for processdiagnostics, test throughput optimization, database and data analysis methods, statistical dataanalysis, expert systems, and related techniques.Authors are asked to submit an abstract of up to four pages in PDF format (font-embedded). The firstcover page must consist of a title, a 50-words summary, author’s name, the full address, fax numberand e-mail address of the lead author, and author preference for oral or poster session presentation, ifany. The body of the abstract should be of three pages or less consisting of one page text (typically800 to 1000 words) followed by up to two pages containing major figures and tables. Please visit theICMTS official web site http://www.see.ed.ac.uk/ICMTS/ for paper submission.The selection process will be based on the technical merit and will be highly weighted in favor ofpapers that have a high test structure content, include measurement data and analysis together withillustrations of the test structures involved. Abstracts received by September 21, 2012 will beconsidered for the conference. A notice of paper acceptance with instructions for manuscriptpreparation for the conference proceedings will be sent to the authors of the papers selected forpresentation by early November, 2012. The deadline for the final paper will be January 14, 2013.For further technical information, please contact the technical chairman:Kiyoshi TakeuchiRenesas Electronics Corp.kiyoshi.takeuchi.znrenesas.com
Keywords: Accepted papers list. Acceptance Rate. EI Compendex. Engineering Index. ISTP index. ISI index. Impact Factor.
Disclaimer: ourGlocal is an open academical resource system, which anyone can edit or update. Usually, journal information updated by us, journal managers or others. So the information is old or wrong now. Specially, impact factor is changing every year. Even it was correct when updated, it may have been changed now. So please go to Thomson Reuters to confirm latest value about Journal impact factor.