ICICDT 2011 - 2011 IEEE International Conference on IC Design & Technology (ICICDT)

Website icicdt.org | Edit Freely

Category ICICDT 2011

Deadline: February 28, 2011 | Date: May 02, 2011-May 04, 2011

Venue/Country: Kaohsiung, Taiwan

Updated: 2010-11-04 00:51:56 (GMT+9)

Call For Papers - CFP

May 2-4, 2011

Kaohsiung, Taiwan

Global Forum for Interaction and Collaboration:

The International Conference on IC Design and Technology is the global forum for interaction and collaboration of IC design and technology for "accelerating product time-to-market". Close collaboration of the multi-discipline technical fields - design/device/process - accelerates the implementation of new designs and new technologies into manufacturing.

IC Trends:

IC industry trends toward specializing system design and manufacturing outsourcing - such as fabless design house, wafer foundry, design automation tool/software house, and semiconductor processing tool supplier - created the needs for individuals with multi-discipline technical skills for collaborations. Furthermore, advanced IC technology no longer can offer the same level of control over many parameters that have direct adverse impact on circuit behavior. New IC designs also push the limit of technology, and in some cases require specific fine-tuning of certain process modules in manufacturing. Thus the traditionally separated communities of design and technology - design/device/process - are increasingly intertwined. Issues that require close interaction and collaboration for trade-off and optimization by all design/device/process fields are addressed in this conference. They are:

Design/device/process optimizations and trade-off for leakage current, power consumption, & noise issues in mixed-signals, large scale IC devices, or design re-use.

Incorporation of new materials (i.e. dual gate, multi-material active layers, etc.) in IC cell library and design of advanced transistor structures (i.e. Double Gate FDSOI, FinFET, etc.).

Implementation of IC design and manufacturing process of new device structures (i.e. PDSOI, FDSOI, MRAM, etc.).

Reduction of process & plasma induced damage or reduction of device/process parameter fluctuation through the optimization of circuit design & layout, device structure, manufacturing process, and semiconductor processing tool.

Conference Format:

As IC design & process technology continue to advance for increased performance, lower power, and accelerated time-to-market, the engineering activities, traditionally separated along the boundary of design and process technology, will have difficulties in meeting the shrinking window of product optimization tasks. The International Conference on IC Design & Technology provides a forum for engineers, researchers, scientists, professors and students to cross this boundary through interactions of design and process technology on product development & manufacturing. The unique workshop style of the conference provides an opportunity to technologists and product designers to exchange breakthrough ideas and collaborate effectively. Two days of technical presentations and workshops will be preceded by a one-day tutorial program of value to both the expert and the beginner.

The venue of 2011 ICICDT will be No.202, MingSheng 2nd Road, Kaohsiung City,Taiwan.

We look forward to seeing you there!