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    SISC 2013 - 2013 IEEE 44th Semiconductor Interface Specialists Conference (SISC)

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    Website www.ieeesisc.org | Want to Edit it Edit Freely

    Category SISC 2013

    Deadline: February 15, 2013 | Date: December 04, 2013-December 07, 2013

    Venue/Country: Arlington, U.S.A

    Updated: 2012-04-01 17:38:02 (GMT+9)

    Call For Papers - CFP

    The SISC is a workshop-style conference that provides a forum for device engineers, solid state physicists, and materials scientists to discuss topics of common interest both formally through invited and contributed presentations, and informally during a variety of events including a poster presentation session. The conference will be held immediately prior to the IEDM. SISC is sponsored by the IEEE Electron Device Society.

    The program includes talks from all areas of MOS science and technology, including but not limited to the following:

    SiO2 and high-k dielectrics on Si and their interfaces

    Insulators on high-mobility and alternative substrates (SiGe, Ge, III-V, SiC, etc.)

    MOS gate stacks with metal gate electrodes

    Stacked dielectrics for non-volatile memory

    Oxide and interface structure, chemistry, defects, and passivation: Theory and experiment

    Electrical characterization, performance and reliability of MOS-based devices

    Surface cleaning technology and impact on dielectrics and interfaces

    Dielectrics on nanowires, nanotubes, and graphene

    Oxide electronics and multiferroics

    Interfaces in photovoltaics, e.g. Si passivation

    Keywords: Accepted papers list. Acceptance Rate. EI Compendex. Engineering Index. ISTP index. ISI index. Impact Factor.
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