ICSCRM 2009 - 13th International Conference on Silicon Carbide and Related Materials ICSCRM 2009

Website http://www.lap.physik.uni-erlangen.de/icscrm2009/index.php | Edit Freely

Category ICSCRM 2009

Deadline: May 15, 2009 | Date: October 11, 2009

Venue/Country: N¨?rnberg, Germany

Updated: 2010-06-04 19:32:22 (GMT+9)

Call For Papers - CFP

New research results relevant to wafer production processes, device fabrication technologies and device applications will also be topics of the conference. The objective is to promote the development and commercialization of advanced devices and circuits used for energy saving, high voltage switching, high frequency, high power amplification and high temperature operation.

The conference also serves as an international forum for the exchange of ideas on recent scientific and technical issues among researchers and engineers in industrial, academic and public sectors.

Topics

Fundamentals (Theoretical and Experimental)

SiC Bulk Growth

SiC Epitaxial Growth

New Materials Grown on SiC

Material Characterization

Defect Engineering

Surfaces and Interfaces

Device Fabrication Processes

Devices (Power Switching Devices, RF Power Devices, High-Temperature Devices, Radiation-Resistant Devices, etc.)

Device Physics (Measurement, Modeling, Simulation and Reliability)

Packaging and Modular Technology

Circuits and Applications

Notes to Authors

The official language of the conference is English, which will be used for all presentations and printed materials. Authors are expected to present their papers in person at the conference.

Publication of Papers

The proceedings will be published in a conference series. The authors of accepted abstracts will be asked to submit manuscripts before the conference to facilitate refereeing. The manuscript format and detailed instructions will be forwarded to the authors at the time of notification of acceptance.