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    ISEDA 2026 - International Symposium of EDA (ISEDA 2026)

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    Website https://www.eda2.com/iseda/index.html | Want to Edit it Edit Freely

    Category EDA

    Deadline: February 10, 2026 | Date: May 08, 2026-May 10, 2026

    Venue/Country: Singapore, Singapore

    Updated: 2025-12-23 15:08:06 (GMT+9)

    Call For Papers - CFP

    International Symposium of EDA (ISEDA 2026)

    Dte: MAY 8-10, 2026

    Venue: Singapore

    Website: https://www.eda2.com/iseda/index.html

    Advised by IEEE/CEDA and ACM/SIGDA, and organized by EDA², the ISEDA (International Symposium of EDA) is an annual premier forum dedicated to VLSI design automation. The symposium aims at exploring the new challenges, presenting leading-edge technologies and providing EDA community with opportunities of predicting future directions in EDA research areas. ISEDA covers the full range of EDA topics from device and circuit levels up to system level, from analog to digital designs as well as manufacturing. The format of meeting intends to cultivate productive and novel interchangeable ideas among EDA researcher and developers. Academic and industrial EDA related professionals who are interested in EDA's theoretical and practical research are all welcomed to contribute to ISEDA.

    Committee

    Executive Committee

    General Chairs

    Prof. Hao, Yue, Professor of Xidian University, Academician of the Chinese Academy of Sciences

    Prof. Wang, Runsheng, Peking University

    Steering Committee

    Prof. Wei, Shaojun, Tsinghua University

    Prof. Zeng, Xuan, Fudan University

    Dr. Girard, Patrick, French National Center for Scientific Research

    Prof. Deen, Jamal, McMaster University

    Dr. Tanurhan, Yankin, Synopsys

    Technical Program Committee

    Conference Chairs

    Dr. Hui, Chiu Wing Colin, GlobalFoundries

    Prof. Ho, Tsung-Yi, The Chinese University of Hong Kong

    Prof. Qu, Gang, University of Maryland

    Technical Program Chairs

    Prof. Yu, Bei, The Chinese University of Hong Kong

    Prof. Schlichtmann, Ulf, Technical University of Munich

    Ms. Leung, Kafai, A*STAR Institute of Microelectronics

    Keynote Chair

    Prof. Liang, Yun, Peking University

    Panel Chair

    Mr. Ong, Jonathan, Applied Materials

    Industry Chair

    Mr. Lam, Lup Meng, Synopsys

    Publicity Chair

    Prof. Basu, Kanad, Rensselaer Polytechnic Institute

    Tutorial Chair

    Prof. Sasan, Avesta, University of California, Davis

    Special Session Chair

    Prof. Ghosh, Swaroop, The Pennsylvania State University

    Tutorial Co Chair

    Prof. Lim, Yeow Kheng, National University of Singapore

    Outreach Chair US

    Prof. Forte, Domenic, University of Florida

    Outreach Chair Europe

    Prof. Halak, Basel, University of Southampton

    Outreach Chair Asia

    Prof. Li, Yongfu , Shanghai Jiao Tong University

    Outreach Chair Canada

    Prof. Chun, Peter, University of Alberta

    Call for Papers

    Original papers in, but not limited to the following areas are invited:

    [1] System-Level Modeling and Design Methodology

    1.1 HW/SW co-design, co-simulation and co-verification

    1.2 System-level design exploration, synthesis, and optimization

    1.3 System-level formal verification

    1.4 System-level modeling, simulation and validation

    1.5 Networks-on-chip and NoC-based system design

    1.6 Constructing Hardware in Scala Embedded Language

    [2] Memory Architecture and Near/In Memory Computing

    2.1 Storage system and memory architecture

    2.2 On-chip memory architectures and management: Scratchpads, compiler, controlled memories, etc.

    2.3 Memory/storage hierarchies and management for emerging memory technologies

    2.4 Near-memory and in-memory computing

    [3] Analog-Mixed Signal Design Automation

    3.1 Analog/mixed-signal/RF synthesis

    3.2 Analog layout, verification, and simulation techniques

    3.3 High-frequency electromagnetic simulation of circuit

    3.4 Mixed-signal design consideration

    [4] High-Level, Behavioral, and Logic Synthesis and Optimization

    4.1 Digital Simulation / Emulation

    4.2 High-Level Synthesis

    4.3 Logic Synthesis

    4.4 Synthesis for Approximate Computing

    [5] Analysis and Optimization for Power and Timing

    5.1 Deterministic/statistical timing analysis and optimization

    5.2 Process technology modeling for timing analysis

    5.3 Power modeling, analysis and simulation

    5.4 Low-power design and optimization at circuit and system levels

    5.5 Thermal aware design and dynamic thermal management

    5.6 Energy harvesting and battery management

    [6] Physical Implementation

    6.1 Floorplanning, partitioning, placement and routing optimization

    6.2 Interconnect planning and synthesis

    6.3 Clock network synthesis

    6.4 Physical design of 3D/2. 5D IC and package ( e. g. , TSV, interposer, monolithic)

    6.5 Post layout and post-silicon optimization

    6.6 Layout Verification

    [7] Testing, Validation, Simulation, and Verification

    7.1 RTL and gate-leveling modeling, simulation, and verification

    7.2 Circuit-level formal verification

    7.3 ATPG, BIST and DFT

    7.4 System test and 3D IC test, online test and fault tolerance

    7.5 Memory test and repair

    [8] Design for Manufacturability and Reliability

    8.1 Design-technology co-optimization (DTCO)

    8.2 Standard and custom cell design and optimization

    8.3 Reticle enhancement, lithography-related design optimizations and design rule checking

    8.4 Design for manufacturability, yield, defect tolerance, cost issues, and DFM impact

    8.5 Device-, gate, and circuit-level techniques for reliability analysis and optimization (e.g., soft error, aging, etc.)

    8.6 Post-Layout optimizations

    [9] Packaging & Multi-Physics Simulation

    9.1 Extraction, TSV, and package modeling

    9.2 Chiplet Design and Design tools

    9.3 Chip Level Thermal Simulation

    9.4 Packaging Stress Analysis

    9.5 Multi-Physics Simulation

    9.6 Signal/Power integrity, EM modeling and analysis

    [10] Technology & Modeling

    10.1 Device Compact Modeling

    10.2 Process Design Kit

    10.3 Semiconductor Process & Device Simulation

    10.4 Cell Library Design, Characterization and Verification

    10.5 New transistor/device and process technology: spintronic, phase-change, single-electron, 2D materials, etc.

    [11] Emerging Technologies and Applications

    11.1 Biomedical, biochip, nanotechnology, MEMS

    11.2 Design automation for 3D ICs and heterogeneous integration

    11.3 Design automation for quantum computing

    11.4 Design automation for silicon photonics

    11.5 Design automation for compound semiconductors verification

    [12] AI & Open Source EDA

    12.1 Artificial Intelligence for EDA

    12.2 Cloud / Parallel Computing for EDA

    12.3 Open Source EDA

    12.4 EDA Database

    12.5 EDA Standardization

    Submission Requirements

    Please read the following submission guidelines carefully before preparing and submitting your manuscript.

    Authors are invited to submit original papers, which have not been published elsewhere and are not currently under consideration for another journal, conference or workshop. Research findings can be submitted as full papers. All paper submissions must be done electronically using the submission system.

    Best Paper Award, Honorable Mention Paper Award will be selected after the presentations.

    Invited Talks: Need an abstract within one page

    Extended Abstract: 1-2 pages

    Regular Full Paper: 4-6 pages

    *Note: Extended abstract will not be published. If you have the publication purpose, please submit full paper before the deadline.

    Submission System

    https://www.eda2.com/conferenceHome/submissionHome

    Contact Us

    Paper Submission: Joyce Zhong, isedaateda2.com

    EDA²: Qiuping Huang, conference_affairsateda2.com

    Local Contact: Summer Boo, infoatsiliconexus.co or +65-89220304


    Keywords: Accepted papers list. Acceptance Rate. EI Compendex. Engineering Index. ISTP index. ISI index. Impact Factor.
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